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CVD Equipment Product List and Ranking from 22 Manufacturers, Suppliers and Companies | IPROS GMS

Last Updated: Aggregation Period:Feb 18, 2026~Mar 17, 2026
This ranking is based on the number of page views on our site.

CVD Equipment Manufacturer, Suppliers and Company Rankings

Last Updated: Aggregation Period:Feb 18, 2026~Mar 17, 2026
This ranking is based on the number of page views on our site.

  1. 天谷製作所 Saitama//Industrial Machinery
  2. ジャパンクリエイト Saitama//Testing, Analysis and Measurement
  3. サムコ Kyoto//Industrial Machinery
  4. 4 マイクロフェーズ Ibaraki//others
  5. 4 佐藤真空 Saitama//Industrial Machinery

CVD Equipment Product ranking

Last Updated: Aggregation Period:Feb 18, 2026~Mar 17, 2026
This ranking is based on the number of page views on our site.

  1. Single-wafer atmospheric pressure CVD device 'A200V' 天谷製作所
  2. SFCV Series Small Thermal CVD Device for Graphene Development 佐藤真空
  3. [Nanofurnace] BWS-NANO Thermal CVD Device テルモセラ・ジャパン 本社
  4. Atmospheric Pressure CVD Equipment "AMAX800V" 天谷製作所
  5. 4 Plasma CVD device "PEGASUS" セルバック

CVD Equipment Product List

1~30 item / All 43 items

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Plasma CVD equipment for thick film formation of SiO2

Plasma CVD device for thick film formation. High speed and low stress (patent pending).

● The adoption of a unique self-bias method enables high-speed (3000-5000 Å/min) and low-stress film deposition. (Patent pending) ● Low-temperature film deposition is possible at room temperature to about 350°C. Additionally, film deposition on plastics is feasible. ● Unique modifications in the reaction chamber help suppress particle generation. ● The LS-CVD method using liquid source TEOS allows for excellent step coverage and filling effects in film deposition. ● Arbitrary control of the refractive index is possible using liquid sources of Ge, P, and B. In addition to the standard one series, it is possible to add two more series of dopant introduction systems as options.

  • CVD Equipment
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Plasma CVD equipment

Plasma CVD equipment

● Despite its compact design, it can accommodate 5 pieces of 3-inch wafers, 3 pieces of 4-inch wafers, and 1 piece of 8-inch wafers. ● Up to 100-step processes are possible. ● Equipped with a load lock chamber, enabling stable processes. ● Features an interlock mechanism for various safety measures.

  • CVD Equipment
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[Data] Silicon processing data using the non-bosch process

We are publishing new data on the non-bosch process for silicon.

This document introduces silicon processing data using the non-Bosch process. It includes results of silicon etching processed with the non-Bosch process using the RIE-800iP. Please take a moment to read it. 【Contents】 ■ Process ■ High aspect ratio Bosch process results ■ Sequential taper shape processing results ■ SEM results of silicon sidewall observation *For more details, please refer to the PDF document or feel free to contact us.

  • CVD Equipment
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[Data] - Example of ICP Etching Process for MicroLEDs

As a result of GaN microLED mesa processing, we have published emission spectral data during the GaN microLED mesa processing!

This document introduces examples of ICP etching for microLEDs. As part of the experiments and results, it includes the outcomes of GaN microLED mesa processing and the photoluminescence spectral data during the GaN microLED mesa processing. Please take a moment to read it. 【Contents】 ■ Experiments and Results ■ Results of GaN MicroLED Mesa Processing ■ Photoluminescence Spectral Data During GaN MicroLED Mesa Processing ■ Summary *For more details, please refer to the PDF document or feel free to contact us.

  • CVD Equipment
  • CVD Equipment

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Plasma CVD device for PET bottles

Coating is possible up to a 3L container! It contributes to reducing logistics costs through lightweight containers.

This product is a film deposition device specialized for DLC coating on "PET bottles," which are commonly used as resin container materials, utilizing the plasma CVD process technology that our company excels in. By applying a sub-micron order DLC thin film coating to the inner surface of PET bottles, it contributes to preventing flavor deterioration due to oxidation of the contents, preventing the leaching of carbonated components, and reducing logistics costs through container weight reduction. 【Features】 - Various equipment configurations can be proposed based on the required production quantity. - Coating is possible for containers up to 3L. - Please consult us regarding containers larger than 3L. - Please consult us regarding resin materials other than PET. - Please consult us regarding metal materials. *For more details, please refer to the PDF document or feel free to contact us.

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CVD・MOCVD customized equipment

Various plasma sources can be equipped! Customized design for CVD, MOCVD, and ALD equipment.

We handle "CVD and MOCVD customized equipment" designed for research and development as well as small-scale batch production. CVD, MOCVD, and ALD equipment can be customized, and a variety of plasma sources from the PLUM, FLARION, and MIRENIQUE series can be installed. Additionally, it is equipped with the FLOCON series flow management system. 【Features】 ■ Equipment for research and development or small-scale batch production ■ Customized design for CVD, MOCVD, and ALD equipment ■ Variety of plasma sources from the PLUM, FLARION, and MIRENIQUE series can be installed ■ Equipped with the FLOCON series flow management system *For more details, please refer to the PDF document or feel free to contact us.

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Plasma CVD Equipment Concept-150/200

With a space-saving design, the vacuum pump module can be installed up to 18 meters away from the process module.

This device is compatible with 4, 5, 6, and 8-inch wafers and is designed to form silicon oxide and silicon nitride films on the wafers using the plasma CVD method. The basic configuration consists of three modules: a process module, an RF generator module (one set each for high frequency and low frequency), and a vacuum pump module.

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Liquid Source Plasma CVD Equipment

A compact and space-efficient device! The substrate supports φ4 inch, and it comes with a heating mechanism and T/S variable mechanism!

This product is a plasma CVD device with a cylinder cabinet designed for liquid raw material sources, including TEOS. It is equipped with a bakeable MFC compatible with liquid sources and various baking mechanisms, and features a uniquely designed plasma electrode to prevent internal abnormal discharges and ensure stable plasma generation. The device allows for substrate replacement and internal maintenance through the opening and closing of the top cover, and it is compact with excellent space efficiency. 【Features】 ■ Equipped with a cylinder cabinet ■ Includes a bakeable MFC compatible with liquid sources and various baking mechanisms ■ Designed with a unique plasma electrode ■ Allows for substrate replacement and internal maintenance through the opening and closing of the top cover ■ Compact and space-efficient *For more details, please refer to the PDF materials or feel free to contact us.

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SFCV Series Small Thermal CVD Device for Graphene Development

High-temperature thermal CVD equipment of tubular furnace type suitable for various material development using hydrocarbon-based compounds such as graphene at universities and research institutions.

We have miniaturized the test pieces to allow for easy operation in producing small quantities and sizes, while simultaneously achieving significant cost reductions. Additionally, we have equipped them with pressure control functionality in the range of 5 to 100 Pa, which was previously considered difficult for small sizes, enabling support for a wider variety of processing patterns. Furthermore, for flammable gases based on hydrocarbons, we have safety devices such as equipment shutdown triggered by alarm detection and atmospheric gas dilution units. For more details, please download the catalog or contact us.

  • Vacuum Equipment
  • Heating device
  • Testing Equipment and Devices
  • CVD Equipment

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CVD Equipment for Synthesizing Single Crystal High Purity Diamonds DCVD-51A

Compact and energy-efficient! Plasma CVD equipment for synthesizing single crystal high-purity diamonds for device fabrication.

Plasma CVD equipment for conducting high-purity diamond synthesis experiments capable of single crystal diamond growth (homoepitaxial). 【Features】 ○ Compact and energy-efficient ○ Utilizes ultra-high vacuum technology, ensuring that the plasma does not contact the chamber walls, allowing for single crystal high-purity diamond synthesis experiments suitable for device fabrication ○ Spherical compact chamber and special electrodes enable high-efficiency operation ○ Experiments can be conducted while observing the discharge state ○ Sample introduction can be developed into a load-lock system ○ Complete shielding structure ensures excellent microwave leakage prevention ○ Operates solely on power and gas supply due to all air-cooled specifications ● For other functions and details, please download the catalog.

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[Nanofurnace] BWS-NANO Thermal CVD Device

Hot Wall Type Thermal CVD Equipment: A compact, high-performance CVD device ideal for fundamental research.

◉ Graphene, carbon nanotubes ◉ ZnO nanowires ◉ Insulating films such as SiO2 Others, compatible with a wide range of applications as a hot-wall thermal CVD system.

  • CVD Equipment
  • Annealing furnace
  • Heating device
  • CVD Equipment

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Single-wafer atmospheric pressure CVD device 'A200V'

Compact the device size as much as possible! Achieve stable film formation and low particle count.

The "A200V" is a single-wafer atmospheric pressure CVD system compatible with φ150 and φ200 mm wafers, covering production from small quantities of diverse products to mass production. By adopting a face-down film formation method, it demonstrates excellent film thickness uniformity, particle control, and embedding performance, depositing silicon oxide films based on SiH4. Additionally, the system can also support options for TEOS-O3 and SiH4-O3. 【Features】 ■ Face-down position ■ Compact device design and configuration ■ Balancing maintainability and high productivity ■ Excellent film thickness uniformity and embedding capability ■ Ensures safety by preventing operators from directly contacting the heating area *For more details, please refer to the PDF materials or feel free to contact us.

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Vertical Reduced Pressure CVD Apparatus

More than 10 types of semiconductor gases can be freely controlled! Customizable.

Supports various uses such as vertical type, sheet, wafer size, gas type, and footprint. This is a high-grade vertical reduced pressure CVD system focused on versatility. It can also be customized based on standard specifications to be manufactured at a lower cost. 【Features】 ■ Supports wafer sizes of 3", 6", and 8" with a small footprint ■ Reduces natural oxidation with heater lifting function ■ Achieves stable temperature control from room temperature to 900℃ *For more details, please contact us or download the PDF for more information.

  • Other semiconductor manufacturing equipment
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Plasma CVD device "PEGASUS"

Low-temperature film formation. High insulation, high barrier, uniformity!

"PEGASUS" is a mass production-compatible plasma CVD device that enables the formation process of insulating films and protective films for memory, power devices, and MEMS with precise and stable film deposition at low temperatures. It features a high level of safety due to its interlock mechanism and prevents contamination from the backside by using non-metal materials at the wafer contact points. 【Features】 ■ Low-temperature film deposition ■ Maintenance-friendly ■ Wafer handling ■ Footprint ■ Maintenance support, etc. *For more details, please download the PDF or feel free to contact us.

  • Plasma surface treatment equipment
  • CVD Equipment

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Agnitron Corporation Used Refurbished MOCVD Equipment

We provide fully refurbished and upgraded legacy MOCVD equipment along with the best service and support.

Agnitron is well-versed in the usage history and features of used equipment, and carries out the refurbishment and upgrades of used equipment to meet customer needs. Additionally, they are knowledgeable in materials science and process engineering, ensuring that they not only focus on the engineering of the equipment but also understand how the past usage history of the equipment can affect future performance, the feasibility of reusing parts, and the appropriate timing for replacements, allowing customers to purchase and use the equipment with confidence. (1) New functions can be added through standard and optional upgrades. (2) Provision of parts and services. (3) Flexible response to various customer demands. (4) Epoxy inspection guarantees available as an option.

  • CVD Equipment
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Plasma CVD device for three-dimensional object experiments (DLC, amorphous SiC)

The compatible film types are DLC, amorphous SiC, etc.! Equipped with a substrate heating mechanism (maximum set temperature: 500°C).

We would like to introduce our "Plasma CVD System for 3D Objects" that we handle. This system can deposit films on three-dimensional objects, and compatible film types include DLC and amorphous SiC, among others. It operates via PC control (sequencer control), allowing for fully automated operation and data logging. We design and manufacture equipment tailored to our customers' needs and budgets, from experimental devices to production systems. Please feel free to contact us for inquiries. 【Features】 ■ Experimental plasma CVD system capable of depositing films on three-dimensional objects ■ Compatible film types: DLC, amorphous SiC, etc. ■ Equipped with a substrate heating mechanism (maximum set temperature: 500°C) ■ Fully automated operation and data logging via PC control (sequencer control) *For more details, please refer to the PDF document or feel free to contact us.

  • Plasma Generator
  • CVD Equipment
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[Manufacturing Results] Plasma CVD Equipment for 3D Object Experimentation

Introduced in the surface treatment process! The material of the vacuum chamber is made of stainless steel, with examples of products achieving a vacuum level of less than 1 Pa.

We would like to introduce our achievements in manufacturing a "Plasma CVD system for three-dimensional objects" for the automotive and motorcycle parts manufacturing industry. We have introduced a product equipped with a substrate heating mechanism that allows for the deposition of DLC, amorphous SiC, and other materials on three-dimensional objects (maximum set temperature: 500°C). Additionally, it features PC operation (sequencer control) for fully automated data logging. Please feel free to contact us when you need assistance. 【Overview of Achievements】 ■ Experimental plasma CVD system capable of film deposition on three-dimensional objects ■ Compatible film types: DLC, amorphous SiC, etc. ■ Equipped with a substrate heating mechanism (maximum set temperature: 500°C) ■ Fully automated and data logging via PC operation (sequencer control) *For more details, please refer to the related links or feel free to contact us.

  • Vacuum Equipment
  • CVD Equipment

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Plasma CVD equipment "SHUTTLELINE(R) Series"

Compact and versatile! This is a high-performance device that can also be adapted for device evaluation processes.

The "SHUTTLELINE(R) series" is a flexible semiconductor manufacturing device that supports PECVD and dry etching for thin film deposition and failure analysis processes. It is compatible with RIE/ICP-RIE and PECVD/ICP-CVD, and is a compact device that can be used for various applications with a range of options. It is recommended for companies and academia that need a compact lab-scale device for R&D or laboratories, or for those looking for a device that can perform both film deposition and etching in one unit. 【Features】 ■ High-precision, damage-free etching process ■ Supports various wafer sizes and shapes, including dies, packaged dies, wafer pieces, and full wafers ■ The shuttle system eliminates the need for hardware changes for different sample sizes ■ Multi-functional support for film deposition/etching in one unit ■ Proven adoption worldwide, with local support through Plasma-Therm LLC's global network *For more details, please feel free to contact us.

  • Other semiconductor manufacturing equipment
  • CVD Equipment

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Continuous Atmospheric Pressure CVD System for solar cell mass production (AMAX1000S)

For mass production of crystalline Si solar cells/For NSG(SiO2)/PSG/BSG deposition High productivity/Continuous atmospheric pressure CVD (APCVD) system

AMAX1000S is a continuous atmospheric pressure CVD system (APCVD system) developed for solar cell products based on the achievements of the "AMAX" series. 【Features】  ・Compatible with 156 mm square/125 mm square wafers  ・High productivity of 1500 wafers per hour  ・Compatible with thin wafers for solar cells 【Applications】  ・Hard mask for diffusion/ion implantation, Sacrificial deposition (NSG)  ・Passivation deposition (protective deposition, insulating deposition) (NSG)  ・Source deposition for solid phase diffusion (BSG, PSG)/Cap deposition (NSG) *For more details, please contact us or download the catalog to view.

  • CVD Equipment
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Plasma CVD equipment

Plasma CVD equipment

● Adopts a tray cassette system. 1. Achieves high throughput by reducing transport time. 2. Supports wafers from φ2 inches to φ8 inches by changing trays. ● Adopts a vacuum cassette chamber. 1. Achieves high throughput with a single vacuum exhaust per cassette. 2. Avoids contamination effects and prevents oxidation of the wafer surface. ● Further improves the reliability of the PD-220L reaction chamber, which has a rich track record of deliveries.

  • CVD Equipment
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Plasma CVD equipment 'PD-270STLC / PD-2201LC'

Tensile and compressive stress control is possible! It can be flexibly installed to fit the space.

At Samco, Inc., we handle the plasma CVD equipment 'PD-270STLC/PD-2201LC'. The 'PD-270STLC' allows for excellent coverage during film formation at the top, middle, and bottom. Additionally, the 'PD-2201LC' can accommodate a wide range of customer requests, from simultaneous film formation of multiple small-diameter wafers using tray transport to highly uniform film formation through single wafer processing. 【Features】 <PD-270STLC> ■ SiN film formation using liquid precursor SN2 ■ Excellent coverage during film formation at the top, middle, and bottom *For more details, please refer to the PDF document or feel free to contact us.

  • Other physicochemical equipment
  • CVD Equipment

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CVD equipment

Achieving excellent film thickness distribution and reproducibility! Multi-chamber specifications and various custom-made options are also available.

We would like to introduce the "CVD equipment" that we handle. Starting with the "Oxide/Nitride Plasma CVD Equipment," which achieves low stress, high hardness, and high insulation through a two-frequency independent application method, we also offer a lineup that includes "DLC Coating Equipment" and "Carbon Nanotube Synthesis Equipment." We can also manufacture multi-chamber specifications and various custom orders. Please feel free to contact us when needed. 【Features of Oxide/Nitride Plasma CVD Equipment】 ■ Achieves excellent film thickness distribution and reproducibility ■ Reduces metal contamination through special surface treatment ■ Capable of controlling a wide range of film properties ■ Abundant accumulated data ■ Compatible with tray transport *For more details, please refer to the PDF materials or feel free to contact us.

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  • CVD Equipment
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Custom-made production achievements: CVD equipment

We have a track record of equipment such as 'plasma CVD systems for metal containers' and 'ICP-type MOCVD systems'!

We would like to introduce the custom manufacturing achievements of Japan Create Co., Ltd. regarding "CVD equipment." We have a track record that includes "Plasma CVD equipment for solar cells," "Plasma CVD equipment for three-dimensional objects," "Plasma CVD equipment for metal containers," and "ICP-type MOCVD equipment." Sample processing is being conducted using demo units. Please feel free to contact us if you have any inquiries. 【Manufacturing Achievements (Excerpt)】 ■ Plasma CVD equipment for solar cells ■ Plasma CVD equipment for three-dimensional objects ■ Research and development load-lock type plasma CVD equipment ■ Plasma CVD equipment for metal containers ■ Plasma CVD equipment for medical containers *For more details, please refer to the PDF materials or feel free to contact us.

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  • CVD Equipment
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Oxide/Nitride Plasma CVD Equipment

Controllable extensive membrane properties! Significant particle reduction and improved productivity.

The "Oxide/Nitride Plasma CVD Equipment" achieves low stress, high hardness, and high insulation through a dual-frequency independent application method. Significant particle reduction and improved productivity are achieved through a radical plasma cleaning system. We can also manufacture multi-chamber specifications and various custom designs, so please feel free to contact us when needed. 【Features】 ■ Achieves low stress, high hardness, and high insulation through a dual-frequency independent application method ■ Excellent film thickness distribution and reproducibility ■ Reduction of metal contamination through special surface treatment ■ Control of a wide range of film properties ■ Abundant accumulated data *For more details, please refer to the PDF document or feel free to contact us.

  • CVD Equipment
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Plasma CVD device for three-dimensional objects

A simple structure with high versatility! It adopts a unique plasma control method.

The "Plasma CVD Equipment for Three-Dimensional Objects" has a wealth of accumulated data and employs a unique plasma control method. The chamber volume is 1m3. It features a simple structure with high versatility, capable of multi-stage bulk processing. We can also manufacture multi-chamber specifications and various custom orders, so please feel free to contact us when needed. 【Features】 ■ Chamber volume: 1m3 ■ Unique plasma control method ■ Capable of multi-stage bulk processing ■ Simple structure with high versatility ■ Can deposit films on various product materials *For more details, please refer to the PDF document or feel free to contact us.

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  • CVD Equipment
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ICPECVD『SI 500 D』

Control of ion density by ICP power! Achieving low-temperature film formation, low damage, and high conformality.

The "SI 500 D" is an ICPECVD that controls ion density using ICP power. With a high plasma density of 10^12 [ions/cm3] achieved by the unique PTSA200ICP source, it enables low-temperature film deposition, low damage, and high conformality. Please feel free to consult us when you need assistance. 【Features】 ■ Control of ion density using ICP power ■ Control of ion energy with optional bias power ■ Optimization of the process through reactor pressure, separated gas supply lines, and adjustment of the spacing between the ICP source and substrate electrode *For more details, please refer to the PDF materials or feel free to contact us.

  • CVD Equipment
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Tube furnace CVD device

This single device can achieve the generation of long-length powder CNTs, the growth of vertically oriented CNTs on substrates, and the deposition of carbon films on powder sample surfaces.

Optionally, by adding introduction units for ammonia gas and other CVD gases, as well as introduction units for solid or liquid precursors for CVD reactions, it is also possible to perform nitriding treatment and film formation of chalcogenide layered materials.

  • Other processing machines
  • CVD Equipment

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Rotary kiln type continuous CVD apparatus

Continuous thermal/CVD processing of powders, continuous CNT synthesis, etc.

This is a continuous CVD processing device with a continuous feed/recovery mechanism for powder samples, enabled by the inclination and rotation mechanism of the reaction tube. It allows for mass production of carbon coating on powder sample surfaces, heat treatment, CVD processing, doping treatment, and more. It is suitable for the large-scale production of large-area oriented CNT substrates and high-yield powder-type CNTs.

  • Other processing machines
  • CVD Equipment

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CVD equipment

CVD equipment

●Features This device is a thin film fabrication apparatus using the CVD method, which supplies raw material gases (gases, liquids, solids) to the CVD reaction chamber, causing chemical reactions to occur in the gas phase or on the surface of the substrate material, and utilizing gas-phase reactions and surface reactions to deposit the desired thin film material onto the substrate. Methods for chemically activating the raw material gases (exciting them) include thermal, plasma, and optical (laser, ultraviolet, etc.), with corresponding devices such as thermal CVD, plasma CVD, and optical CVD.

  • Analytical Equipment and Devices
  • Other laboratory equipment and containers
  • CVD Equipment

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CVD device "Nano Carbon Deposition Device"

Three types of sedimentation devices are available! Please choose according to your needs.

We would like to introduce the "Nano Carbon Deposition Device" handled by Katagiri Engineering Co., Ltd. This product is a CVD device capable of synthesizing nano carbon materials. In addition to the "CND-050LP," we offer a large-area nano carbon deposition device, the "LCND-200," and a PN nano carbon deposition device, the "NCD-050W." You can choose according to your application. 【Features】 ■ Capable of synthesizing nano carbon materials ■ Three types in the lineup ■ Selectable based on application *For more details, please refer to the PDF document or feel free to contact us.

  • CVD Equipment
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